Invention of the High Electron Mobility Transistor (HEMT) and its development for the progress of information and communications technology
Dr Mimura invented the High Electron Mobility Transistor (HEMT) with a new structure, in which two layered semiconductors are stacked. He revealed that HEMT has excellent high-frequency characteristics because of its high mobility nature of electrons. This invention has led to significant advancements both in information and communications technology and in physics studies of electrons confined in ultrathin conductive layers.
Kyoto Prize award category: Advanced Technology - Electronics